Yield improvement by redundancy method for component calibration

Yield Improvement by the Redundancy Method for Component Calibration

Built-in redundancy analysis for memory yield improvement

With the advance of VLSI technology, the capacity and density of memories is rapidly growing. The yield improvement and testing issues have become the most critical challenges for memory manufacturing. Conventionally, redundancies are applied so that the faulty cells can be repairable. Redundancy analysis using external memory testers is becoming inefficient as the chip density continues to gro...

Improvement of Accuracy in Environmental Dosimetry by TLD Cards Using Three-dimensional Calibration Method

Background: The angular dependency of response for TLD cards may cause deviation from its true value on the results of environmental dosimetry, since TLDs may be exposed to radiation at different angles of incidence from the surrounding area.Objective: A 3D setting of TLD cards has been calibrated isotropically in a standard radiation field to evaluate the improvement of the accuracy of meas...

Redundancy Yield Model for SRAMS

This paper describes a model developed to calculate the number of redundant good die per wafer. A block redundancy scheme is used here, where the entire defective memory subarray is replaced by a redundant element. A formula is derived to calculate the amount of improvement expected after redundancy. This improvement is given in terms of the ratio of the overall good die per wafer to the origin...

A Simple and Fast Method for Field Calibration of Triaxial Gyroscope by using Accelerometer